|
| Place of Origin: | Xi'an Shaanxi China |
| Brand Name: | XINLAND |
| Certification: | CE |
| Model Number: | XL-650LD100 |
■Specifications
Wavelength: 650nm
Light Output: 5mW CW
Package Type: TO-18(Φ5.6mm)
High Output Power: 230mW (Pulse
High Efficiency: 0.95W/A (typ.)
Visible Light: 658nm (typ.)
Low Aspect Ratio ( θ ⊥ / θ //): 1.8 (typ.)
Low Astigmatic Distance: 1µm (typ.)
■A bsolute Maximum Ratings (Tc=25℃)
|
Parameter |
Symbols |
Ratings |
Units |
|
|
Optical Output |
Po(CW) |
5 |
mW |
|
|
Reverse Voltage |
Laser |
Vr |
2 |
V |
|
PIN PD |
Vr (PIN) |
30 |
V |
|
|
Operating Temperature |
Top |
-10 ~ +40 |
℃ |
|
|
Storage Temperature |
Tstg |
-40 ~ +80 |
℃ |
|
XL-650LD100 is a high-power, high-efficient AlGaInP
semiconductor laser which provides a stable, single
transverse mode oscillation with emission wavelength of
658nm and standard pulse light output of 230mW.
XL-650LD100 has a real-index-waveguide which improves the
slope efficiency (reduction of the operating current) and the
astigmatic distance.
XL-650LD100 has a window-mirror-facet which improves
the maximum output power. That leads to highly reliable and
high-power operation at 75 °C.
■Electrical and optical Characteristics(Tc=25℃)
|
Parameter |
Symbols |
Conditions |
Min |
Typ |
Max |
Units |
|
|
Threshold Current |
Ith |
- |
- |
12 |
16 |
mA |
|
|
Operating Current |
Iop |
Po=5mW |
- |
18 |
22 |
mA |
|
|
Operating Voltage |
Vop |
Po=5mW |
- |
2.3 |
2.6 |
Volts |
|
|
Slope Efficiency |
η |
- |
0.6 |
0.8 |
1.0 |
mW/mA |
|
|
Monitor Current |
Im |
Po=5mW |
0.09 |
0.16 |
0.3 |
mA |
|
|
Beam Divergence (FWHM) |
Parallel |
θ‖ |
Po=5mW |
6 |
7 |
9 |
deg |
|
Perpendicular |
θ⊥ |
Po=5mW |
25 |
28 |
30 |
deg |
|
|
Parallel Deviation Angle |
△θ‖ |
Po=5mW |
-3 |
- |
3 |
deg |
|
|
Perpendicular Deviation Angle |
△θ⊥ |
Po=5mW |
-3 |
- |
3 |
deg |
|
|
Emission Point Accuracy |
△X,△Y,△Z |
Po=5mW |
-80 |
- |
80 |
um |
|
|
Lasing Wavelength |
λp |
Po=5mW |
645 |
655 |
665 |
nm |
|
